Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-
A. `5.0xx10^(9)m^(-3)`
B. `6.0xx10^(6)m^(-3)`
C. `7.0xx10^(3)m^(-3)`
D. `4.0xx10^(9)m^(-3)`