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in Physics by (38.0k points)
Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-
A. `5.0xx10^(9)m^(-3)`
B. `6.0xx10^(6)m^(-3)`
C. `7.0xx10^(3)m^(-3)`
D. `4.0xx10^(9)m^(-3)`

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1 Answer

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by (37.8k points)
Correct Answer - A

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