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In C-MOS technology, shallow P-well or N-well regions can be formed using
1. low-pressure chemical vapor deposition
2. low energy spattering
3. low-temperature dry oxidation
4. low energy ion implantation

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Correct Answer - Option 4 : low energy ion implantation

Low energy ion implantation, because it provides independent control of close and depth.

Ion implantation deposits controlled amount of charged species in a specific region of a semiconductor.

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