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A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?


1. Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites
2. Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites
3. Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites
4. Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

1 Answer

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Correct Answer - Option 1 : Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

Concept:

If the substituting atom gives one extra electron in the outermost shell then n-type semiconductor is formed. If substituting atom has one electron less in the outermost shell then p-type semiconductor is formed.

Si → 4e- in the outermost shell

Ga → 3e- in the outermost shell

As → 5e- in the outermost shell

Application:

Note:  Here, GaAs is doped with Silicon. So, Silicon is the substituting atom.

For Arsenic sites, Silicon will act as a p-type dopant as it has 1 electron less than Arsenic in its outermost shell.

And for Gallium sites, Silicon will act a n-type dopant as it has 1 electron more than Gallium in its outermost shell.

Si → Ga → 1e- extra → n-type

Si → As → 1e- less → p-type

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