Use app×
Join Bloom Tuition
One on One Online Tuition
JEE MAIN 2025 Foundation Course
NEET 2025 Foundation Course
CLASS 12 FOUNDATION COURSE
CLASS 10 FOUNDATION COURSE
CLASS 9 FOUNDATION COURSE
CLASS 8 FOUNDATION COURSE
0 votes
316 views
in General by (115k points)
closed by
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
1. Both the P-region and the N-region are heavily doped
2. The N-region is heavily doped compared to the P-region
3. The P-region is heavily doped compared to the N-region
4. An intrinsic silicon region is inserted between the P-region and the N-region

1 Answer

0 votes
by (152k points)
selected by
 
Best answer
Correct Answer - Option 1 : Both the P-region and the N-region are heavily doped

A negative differential resistance region is observed if both the P and N regions are heavily doped. One such example is the tunnel diode.

Welcome to Sarthaks eConnect: A unique platform where students can interact with teachers/experts/students to get solutions to their queries. Students (upto class 10+2) preparing for All Government Exams, CBSE Board Exam, ICSE Board Exam, State Board Exam, JEE (Mains+Advance) and NEET can ask questions from any subject and get quick answers by subject teachers/ experts/mentors/students.

Categories

...