Correct Answer - Option 2 : 2 kΩ
Concept:
The output Resistance of FET is defined as
\({r_o} = \frac{1}{{\lambda {I_D}}}\)
Where λ = channel length modulator parameter
ID = drain current
Calculation:
Given
λ = 0.05 V-1
ID = 10 mA Important Point:
\({r_o} = \frac{1}{{\lambda {I_D}}} = \frac{1}{{0.05 \times 10 \times {{10}^{ - 3}}}} = 2K{\rm{\Omega }}\)
NOTE:
If MOSFET does not have a channel length modulator then ⇒ λ = 0
\({r_{ds}} = \frac{1}{{\lambda {I_{DS}}}} = \infty \) (of P resistance)