Correct Answer - Option 1 :
\({I_D} = {I_S}({e^{(q{V_D}/nRT)}} - 1)\)
Explanation:
An ideal diode equation or Shockley equation is given by
\({I_D} = {I_S}\left( {{e^{\frac{{q{V_D}}}{{\eta kT}}}} - 1} \right)\)
Where IS is the reverse saturation current
q is the charge on the electron
VD is applied forward-bias voltage across the diode
η is an ideality factor = 1 for indirect semiconductors
= 2 for direct semiconductors
k is the Boltzmann’s constant
T is the temperature in Kelvin
kT/q is also known as thermal voltage (VT).
At 300 K (room temperature), kT/q = 25.9 mV