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For the most accurate model the diode forward current is
1. \({I_D} = {I_S}({e^{(q{V_D}/nRT)}} - 1)\)
2. \({I_D} = {I_S}({e^{(q{V_D}/nRT)}})\)
3. \({I_D} = {I_S}({e^{( - q{V_D}/nRT)}} - 1)\)
4. \({I_D} = {I_S}(1 - {e^{(q{V_D}/nRT)}})\)

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Correct Answer - Option 1 : \({I_D} = {I_S}({e^{(q{V_D}/nRT)}} - 1)\)

Explanation:

An ideal diode equation or Shockley equation is given by

\({I_D} = {I_S}\left( {{e^{\frac{{q{V_D}}}{{\eta kT}}}} - 1} \right)\)

Where IS is the reverse saturation current

q is the charge on the electron

VD is applied forward-bias voltage across the diode

η is an ideality factor = 1 for indirect semiconductors

= 2 for direct semiconductors

k is the Boltzmann’s constant

T is the temperature in Kelvin

kT/q is also known as thermal voltage (VT).

At 300 K (room temperature), kT/q = 25.9 mV

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