Question

Consider two BJT’s biased at the same collector current with area A₁ = 0.2μm × 0.2μm and A₂= 300μm × 300μm Assuming that all other device parameters are identical,KT/q = 26mV, the intrinsic carrier concentration is 1 × 10¹⁰ CM^-3 and q = 1.6 × 10−¹⁹C, the difference between the base – emitter voltage (in mV) of the two BJT’(i.e V_BE1 - V_BE2).........

Answer 1

Note that collector through forward biased, emitter – base junction diode. 

It can be written as