The injected excess electron concentration profile in the base region of an npn BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter – base junction is 0.001 2μ=800 2/(−) in the base region and depletion layer widths are negligible, then the collector current IC (in mA) at room temperature is __ (Given: thermal voltage =26 at room temperature, electronic charge =1.6×10−19 )
