(a) There are three possible biasing conditions for a p-n junction diode and these are:
1) Zero bias: In this biasing condition, no external voltage potential is applied to the diode.
2) Forward bias: In this biasing condition, a negative voltage is applied to the N-type material and a positive voltage is applied to the P-type material, Due to this type of biasing, the width of the p-n junction diode decreases.
3) Reverse bias: In this biasing condition, a positive voltage is applied to the N-type material and a negative voltage is applied to the P-type material, Due to this type of biasing, the width of the p-n junction diode increases.
The circuit arrangement for studying V-I characteristics of a p-n junction diode in forward bias is given below.
The circuit arrangement for studying V-I characteristics of a p-n junction diode in reverse bias is given below.
Typical V-I characteristic of a silicon diode is given below.
(b) A light-emitting diode (LED) is a semiconductor device that emits light when an electric current flows through it. When current passes through an LED, the electrons recombine with holes emitting light in the process. LEDs allow the current to flow in the forward direction and blocks the current in the reverse direction.
Some advantages of LEDs over Incandescent Power Lamps are:
- LEDs consume less power, and they require low operational voltage.
- No warm-up time is needed for LEDs.
- The emitted light is monochromatic.
- They exhibit long life and ruggedness.