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0 votes
6.0k views
in Physics by (50.2k points)

What accounts for the flow of charge carriers in forward and reverse biasing of silicon P-N diode-

(A) Drift in both reverse and forward bias

(B) Drift in forward bias and diffusion in reverse bias

(C) Drift in reverse bias and diffusion in for ward bias

(D) Diffusion in both forward and reverse bias

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1 Answer

+1 vote
by (56.7k points)

Correct Answer is: (C) Drift in reverse bias and diffusion in for ward bias

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