Question

In an intrinsic semiconductor the energy gap E_g is 1.2eV. Its hole mobility is much smaller than electron smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the temperature dependence of intrinsic carrier concentration n. is given by \(n_1= n_0exp(-\frac{E_g}{2K_BT})\) where n₀ is a constant.

Answer 1

Here,

E_g = 1.2 eV; K = 8.62 x 10^-5 eVK^-1