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A semiconductor has equal electron and hole concentration of 2 × 108 m-3. On doping with a certain impurity, the electron concentration increases to 4 × 1010 m-3 , then calculate the new hole concentration of the semiconductor.

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Given: ni = 2 × 108 m-3, n = 4 × 1010 m-3

After doping nh = 1021 m-3

To find: Number density of holes (nh)

Formulae: ni= nenh

Calculation: From formula.

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