The width of forbidden gap in silicon crystal is `1.2 ev`. When the crystal is converted into a n-type semiconductor the distance of fermi level from conduction band is Greater than `0.55 eV`
A. Greater than `0.55 eV`
B. Equal to `0.55 eV`
C. lesser than `0.55 eV`
D. Equal to `1.1 eV`
