A pure semiconductor has equal electron and hole concentration of 1016 m–3. Doping by indium increases number of hole concentration nh to 5 x 1022 m–3. Then, the value of number of electron concentration ne in the doped semiconductor is
(a) 106 /m
(b) 1022/m3
(c) 2 x 106 /m3
(d) 2 x 109 /m3
