Consider a block of a semiconductor of length l and area of cross-section A. Let an electric field E be applied across its ends and a potential difference V is acting across its ends as shown in figure 14.91. The electrons and holes in the semiconductor are moving due to this applied electric field. Both electrons and holes contribute to the current. The total current I can be written as the sum of the contribution of electron and hole currents.
∴ I = Ie + Ih
Where Ie = current due to electrons, and Ih = current due to holes. Both electrons in the conduction band and holes in valence band are moving randomly as electrons in a metal.

But using the relation
Ie = ne Ave e, and for the hole
Ih = nh Avh e, we get
I = neAeVe + nhA Vhe
Where ne is the magnitude of the electron charge, n is the electron density and nh is hole density and ve and vh are electron and hole drift velocities. A low applied electric fields, semiconductors obey Ohm’s law so that

where µe and µh is the mobility of electrons and holes respectively (the mobility µ is defined as the drift velocity per unit electric field).
The conductivity σ \(( = \frac{1}{\rho})\) given by
σ = \(\frac{1}{\rho}\) = e(ne ve + nh vh) ...........(i)
The eq. (i) shows that the resistivity of a semiconductor depends on the electron and hole densities and their mobilities. With the increase of temperature of the semiconductor, the value of ne and nh also increases.Hence the conductivity a of semiconductor increases with the increase in temperature.