Question

Calculate the depletion layer width for a pn junction with zero bias in germanium, given that the impurity concentrations are Na = 1 × 10²³ m⁻³ and Nd = 2 × 10²²m⁻³, respectively at T = 300 K, ∈_r = 16 and contact potential difference V₀ = 0.8 V.

Answer 1

where ∈_r is the relative permittivity, V_b is the bias voltage applied to the junction (here V_b = 0), Na and Nd are carrier concentrations in n-type and p-type respectively.